Model/Brand/Package
Category/Description
Inventory
Price
Data
-
![]()
Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1.7kV 150A57231+$1297.781110+$1285.983125+$1280.084150+$1274.1851100+$1268.2861150+$1262.3871250+$1256.4881500+$1250.5891 -
![]()
Category: IGBTtransistorDescription: Infineon FS100R12KT4GBOSA1 NChannel IGBT module, 3-phase bridge, 100 A, Vce=1200 V AG-ECONO3-4 package91141+$1795.860010+$1779.534025+$1771.371050+$1763.2080100+$1755.0450150+$1746.8820250+$1738.7190500+$1730.5560 -
![]()
Category: IGBTtransistorDescription: IGBTIGBT modules17801+$1372.297310+$1359.821925+$1353.584250+$1347.3464100+$1341.1087150+$1334.8710250+$1328.6333500+$1322.3956 -
![]()
Category: IGBTtransistorDescription: IGBT The Infineon * * Infineon * * series IGBT modules provide low switching losses for switching frequencies up to 60 kHz. IGBT spans a series of power modules, such as ECONOPACK package, with open collector emitter voltage at 1200V; PrimePACK IGBT half bridge chopper module with NTC up to 1600/1700V. PrimePACK IGBT can be found in industrial, commercial, construction, and agricultural vehicles. The N-channel TRENCHSTOP TM and Fieldstop IGBT modules are suitable for both hard switching and soft switching applications, such as inverters, UPS, and industrial drives. Package types include: 62mm module, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 # # # IGBT discrete parts and modules, Infineon insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.93611+$1148.359310+$1137.919725+$1132.699950+$1127.4800100+$1122.2602150+$1117.0404250+$1111.8206500+$1106.6008 -
![]()
Category: IGBTtransistorDescription: Infineon FS75R12KE3GBOSA1 NChannel IGBT module, 3-phase bridge, 100 A, Vce=1200 V, 35 pin ECONO3 package23141+$1135.938110+$1125.611425+$1120.448050+$1115.2847100+$1110.1213150+$1104.9580250+$1099.7946500+$1094.6313 -
![]()
Category: IGBTtransistorDescription: Infineon F4150R12KS4BOSA1 NChannel IGBT module, bridge, 180 A, Vce=1200 V AG-ECONO3-4 package91521+$1580.103810+$1565.739225+$1558.556950+$1551.3746100+$1544.1924150+$1537.0101250+$1529.8278500+$1522.6455 -
![]()
Category: IGBTtransistorDescription: IGBT 模块，Infineon **Infineon** 系列 IGBT 模块提供低切换损耗，用于高达 60 khz 频率的切换。 IGBT 跨一系列电源模块，如 ECONOPACK 封装，1200V 时带集电极开路发射器电压；PrimePACK IGBT 半桥斩波器模块，其 NTC 高达 1600/1700V。 PrimePACK IGBT 可在工业、商业、建筑和农业车辆中找到。 N 通道 TRENCHSTOP TM 和 Fieldstop IGBT 模块适用于硬切换和软切换应用，例如反相器、UPS 和工业驱动器。 封装类型包括：62mm 模块、EasyPACK、EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 ### IGBT 分立件和模块，Infineon 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。7553 -
![]()
Category: IGBTtransistorDescription: EconoPACK™ 3 1700V sixpack IGBT module with trench/fieldstop IGBT4, Emitter Controlled Diode and NTC52481+$1098.184810+$1059.652050+$1054.8354100+$1050.0188150+$1042.3122250+$1035.5690500+$1028.82581000+$1021.1192
